Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D VNAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint. The 850 EVO is the advanced consumer SSD powered by 3D V-NAND technology that maximizes everyday computing experiences with optimized performance and enhanced reliability.
Powered by Samsung’s cutting-edge 3D V-NAND technology, 850 EVO delivers top-class sequential and random read and write performance to optimize everyday computing. With improved performance thanks to TurboWrite technology the 850 EVO provides not only more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds for the 120/250 GB models as well. In fact, the 850 EVO delivers top class sequential read (540 MB/s) and write (520 MB/s) performance in all capacities. This comes with optimized random read and write performance on all QD and improved QD1 and QD2 random performance for Client PC usage.
With enhanced reliability through improved sustained performance, the 850 EVO assures longterm dependable performance up to 30% longer than the 840 EVO with minimized performance degradation. This means you can use it every day when taking care of work or entertaining yourself knowing it will keep performing even with heavy daily workloads over the years.
Product Type: 2.5″ Solid State Drive
Series: 850 Evo Range
Sequential Read Speed: 540MB/s
Sequential Write Speed: 520MB/s